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G0100 4608M X1288 024A01 EPE6094J 2SC5296 85238 BU1507AX
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  Datasheet File OCR Text:
 @vic
SOT-23 Plastic-Encapsulate Transistors
AV9015LT1
FEATURES Power dissipation PCM: 0.2 W (Tamb=25)
TRANSISTOR (PNP) SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
TJ, Tstg: -55 to +150
0. 95
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE(sat)
unless otherwise specified)
Test conditions MIN -50 -45 -5 -0.1 -0.1 200 1000 -0.3 -1 V V TYP MAX UNIT V V V
Ic= -100A, IE=0 Ic= -0.1mA, IB=0 IE=-100A, IC=0 VCB=-50V, IE=0 VEB= -5V, IC=0 VCE=-5V, IC= -1mA IC=-100mA, IB= -10mA IC=-100mA, IB=-10mA VCE=-5V, IC= -10mA
0. 4
Collector current ICM: -0.1 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range
1. 0
2. 4 1. 3
2. 9
1. 9
0. 95
A A
Transition frequency
fT
f=30MHz
150
MHz
CLASSIFICATION OF hFE(1) Rank Range L 200-450 H 450-1000
DEVICE MARKING
S9015LT1=M6
Copyright @vic Electronics Corp.
Website http://www.avictek.com


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